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| APM4220 N-Channel Enhancement Mode MOSFET Features * * * * 25V/14A, RDS(ON)=7.5m(typ.) @ VGS=10V RDS(ON)=10m(typ.) @ VGS=4.5V Super High Dense Cell Design for Extremely Low RDS(ON) Reliable and Rugged SOP-8 Package Pin Description S S S G 1 2 3 4 8 7 6 5 D D D D SO - 8 D Applications * Power Management in Desktop Computer or G DC/DC Converters. S Ordering and Marking Information APM4220 Lead Free Code Handling Code Temp. Range Package Code N-Channel MOSFET Package Code K : SO-8 Operating Junction Temp. Range C : -55 to 150C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Orginal Device XXXXX - Date Code APM4220 K : APM4220 XXXXX Absolute Maximum Ratings Symbol VDSS VGSS ID * (TA = 25C unless otherwise noted) Rating 25 20 14 60 A V Unit Parameter Drain-Source Voltage Gate-Source Voltage Maximum Drain Current - Continuous Maximum Drain Current - Pulsed IDM ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 1 www.anpec.com.tw * Surface Mounted on FR4 Board, t 10 sec. APM4220 Absolute Maximum Ratings (Cont.) Symbol PD TJ TSTG * RJA (TA = 25C unless otherwise noted) Rating Unit W 1.0 150 -55 to 150 50 C C C/W Parameter TA=25C Maximum Power Dissipation Maximum Junction Temperature Storage Temperature Range Thermal Resistance - Junction to Ambient TA=100C 2.5 Electrical Characteristics Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON) VSD a b a (TA = 25C unless otherwise noted) APM4220 Typ. Max. Min. 25 1 Parameter Test Condition Unit Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage VGS=0V, IDS=250A VDS=20V , VGS=0V VDS=VGS, IDS=250A VGS=20V, VDS=0V VGS=10V, IDS=14A VGS=4.5V,IDS=8A IS=16A, VGS=0V V 1.5 7.5 10 0.7 1 2 100 9 12 1.2 A V nA m V Dynamic Qg Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance VDS=15V, IDS=14A VGS=4.5V, 16 6 6 10 20 nC 15 13 50 20 pF ns VDD=15V, IDS=1A, VGEN=10V,RG=6, VGS=0V VDS=15V Frequency=1.0MHz 7 35 10 1785 605 490 Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width 300s, duty cycle 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 2 www.anpec.com.tw APM4220 Typical Characteristics Output Characteristics 60 VGS= 4,5,6,7,8,9,10V 50 Transfer Characteristics 60 50 IDS-Drain Current (A) 40 30 20 VGS=3V ID-Drain Current (A) 40 30 Tj=125 C 20 10 Tj=25 C o o VGS=2.5V 10 VGS=2V 0 0 2 4 6 8 10 Tj=-55 C o 0 0 1 2 3 4 5 VDS-Drain-to-Source Voltage (V) VGS-Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 1.2 On-Resistance vs. Drain Current 0.014 IDS=250A VGS(th)-Thershold Voltage (V) (Normalized) RDS(ON)-On-Resistance () 1.0 0.012 VGS=4.5V 0.010 0.8 0.008 VGS=10V 0.6 0.006 0.4 -50 -25 0 25 50 75 100 125 150 0.004 0 10 20 30 40 50 60 Tj-Junction Temperature (C) IDS-Drain Current (A) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 3 www.anpec.com.tw APM4220 Typical Characteristics (Cont.) On-Resistance vs. Gate-to-Source Voltage 0.030 ID= 14A 0.025 0.020 0.015 0.010 0.005 0.000 0 On-Resistaence vs. Junction Temperature 1.6 VGS=10V IDS=14A RDS (ON)-On-Resistance () RDS(ON)-On-Resistance () (Normalized) 2 4 6 8 10 1.4 1.2 1.0 0.8 0.6 -50 -25 0 25 50 75 100 125 150 VGS-Gate-to-Source Voltage (V) Tj-Junction Temperature (C) Gate Charge 10 VDS=10 V IDS=14A 3000 Capacitance Frequency=1MHz 2500 VGS-Gate-to-Source Voltage (V) 8 Capacitance (pF) 2000 1500 1000 500 0 0 6 Ciss 4 Crss Coss 2 0 0 8 16 24 32 5 10 15 20 25 QG-Total-Gate Charge (nC) VDS-Drain-to-Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 4 www.anpec.com.tw APM4220 Typical Characteristics (Cont.) Source-Drain Diode Forward Voltage 16 80 Single Pulse Power ISD-Source Current (A) 10 Tj=125 C o o 60 Tj=-55 C Power (W) 1.5 40 1 Tj=25 C o 20 0.1 0.0 0.3 0.6 0.9 1.2 0 0.01 0.1 1 10 30 VSD-Source to Drain Voltage (V) Time (sec) Normalized Transient Thermal Transient Impedence, Junction to Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle=0. D=0.2 D=0.1 0.1 D=0.05 D=0.02 D=0.01 SINGLE PULSE 1. Duty Cycle , D=t1/t2 2. Per Unit Base=RthJA=50C/W 3. TJM-TA=PDMZthJA 4. Surface Mounted 0.01 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 5 www.anpec.com.tw APM4220 Packaging Information SOP-8 pin ( Reference JEDEC Registration MS-012) E H e1 D e2 A1 A 1 L 0.004max. Dim A A1 D E H L e1 e2 1 Mi ll im et er s Min . 1. 35 0. 10 4. 80 3. 80 5. 80 0. 40 0. 33 1. 27B S C 8 Max . 1. 75 0. 25 5. 00 4. 00 6. 20 1. 27 0. 51 Min. 0. 053 0. 004 0. 189 0. 150 0. 228 0. 016 0. 013 0.015X45 Inche s Max . 0. 069 0. 010 0. 197 0. 157 0. 244 0. 050 0. 020 0. 50B S C 8 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 6 www.anpec.com.tw APM4220 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. Reflow Condition (IR/Convection or VPR Reflow) Reference JEDEC Standard J-STD-020A APRIL 1999 temperature Peak temperature 183C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max. 60 seconds 215-219C or 235 +5/-0C 10 C /second max. Package Reflow Conditions pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 7 www.anpec.com.tw APM4220 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles Carrier Tape & Reel Dimensions t E Po P P1 D F W Bo Ao D1 T2 Ko J C A B T1 Application SOP-8 Application SOP-8 A 3301 F 5.5 0.1 B 62 1.5 C 12.75 + 0.1 5 J 2 + 0.5 T1 12.4 +0.2 P1 2.0 0.1 T2 2 0.2 Ao 6.4 0.1 W 12 + 0.3 - 0.1 Bo 5.2 0.1 P 8 0.1 E 1.75 0.1 D D1 Po 1.550.1 1.55+ 0.25 4.0 0.1 Ko t 2.1 0.1 0.30.013 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 8 www.anpec.com.tw APM4220 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Aug., 2002 9 www.anpec.com.tw |
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